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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-247 package *High voltage ,high speed APPLICATIONS *Switching Regulators *Inverters *Solenoids *Relay Drivers *Motor Controls *Deflection Circuits PINNING (see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16010 Fig.1 simplified outline (TO-247) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total Power Dissipation Derate above 25 Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 850 450 6 15 20 10 15 135 1.11 150 -55~150 UNIT V V V A A A A W W/ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.93 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance CONDITIONS IC=0.1A ;IB=0 IC=5A; IB=0.7A IC=10A ;IB=1.3A TC=100 IC=10A ;IB=1.3A TC=100 VCE=850V;RBE=50?;TC=100 VCE=850V; VBE(off)=1.5V TC=100 VEB=6V; IC=0 IC=15A ; VCE=5V VCB=10V,IE=0;f=1.0KHz 5 MIN 450 MJW16010 SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICER ICEV IEBO hFE COB TYP. MAX UNIT V 2.5 3.0 3.0 1.5 1.5 2.5 0.25 1.5 1.0 V V V mA mA mA 400 pF Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time IC=10A ; VCC=250V IB1=1.3A ;IB2=2.6A PW=30s; RB2=1.6? Duty CycleD2.0% 20 200 1200 200 ns ns ns ns 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJW16010 Fig.2 Outline dimensions 3 |
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